Abstract
The electrical properties of silicon nanocrystals (Si NCs) embedded in silicon-rich silicon nitride (SRSN) films were investigated by fabricating metal-insulator-semiconductor capacitor structures to utilize the Si NCs as charge storage nodes. The Si NCs embedded in SRSN films were prepared by catalytic chemical vapor deposition technique at substrate temperatures below 200 °. The counterclockwise hysteresis loops were observed in capacitance-voltage (C-V) characteristics. A memory window of 13 V was observed in the sweep voltage range of ±12 V.
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