Abstract

The high temperature defect equilibria and self-compensation behavior of ZnTe were investigated by measuring the high temperature electrical transport properties under equilibrium conditions of Al-doped single crystals. The conductivity type was changed from p-type to low resistivity n-type between 700 and 925°C in Zn-rich atmospheres by the addition of 6 × 10 18 cm −3 Al donors. A two-carrier treatment of the transport measurements yields nαP +0·4 Zn. It is proposed that the impurity donors are compensated by doubly ionized native acceptors.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call