Abstract
We report on the interface characteristics of yttria-stabilized zirconia films grown on siliconsubstrates. From x-ray reflectivity analysis we found that the film thickness and interfaceroughness decreased as the growth temperature increased, indicating that the growthmechanism varies and the chemical reaction is limited to the interface as the growthcondition varies. Furthermore, the packing density of the film increased as the growthtemperature increased and the film thickness decreased. X-ray photoelectron spectroscopyanalysis of very thin films revealed that the amount of chemical shift increased as thegrowth temperature increased. Intriguingly, the direction of the chemical shift ofZr was opposite to that of Si due to the second nearest neighbor interaction.
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