X-ray reflectivity analysis on initial stage of diamond-like carbon film deposition on Si substrate by RF plasma CVD and on removal of the sub-surface layer by oxygen plasma etching

Abstract

The multi-layered structure of thin diamond-like carbon (DLC) films was investigated by X-ray reflectivity (XRR) analysis. Thin DLC films were deposited on Si substrate by RF plasma chemical vapor deposition (CVD) from acetylene source gas with short duration of plasma operation from 0.08 to 4.99s. It was confirmed from XRR analysis that the thin DLC film on Si substrate had 3 layers consisting of a subsurface layer on the grown surface, a mixing layer at the interface to Si substrate, and a bulk-DLC layer sandwiched between the 2 layers. The 3 layers had been formed in 0.08s at beginning of deposition with distinctive bulk-DLC layer of 1.7nm thick already appeared due to extremely higher deposition rate only at the initial stage of CVD. The thickness of bulk-DLC layer increased with increasing CVD duration while both the mixing layer of higher density and the sub-surface layer of extremely low density continuously existed. By oxygen plasma etching, it was confirmed by XRR analysis that the sub-surface layer was clearly removed and another layer of lower density than the bulk DLC appeared.