The growth properties of SiGe films on Si(100) using Si 2H 6 gas and Ge solid source molecular beam epitaxy

Abstract

High crystalline quality SiGe and SiGe Si multilayer films were epitaxially grown on Si(100) substrates using Si 2H 6 gas and Ge solid source molecular beam epitaxy (Si 2H 6Ge MBE). The characteristics by this method were cleared for the first time. An acceleration of growth rate and hydrogen surfactant effect on Ge surface segregation were observed in the surface reaction limited deposition. On the other hand, in the gas transport limited deposition, the surface Ge content was higher than that in the bulk because of Ge surface segregation. Ge contents of SiGe films can be controlled by Si 2H 6 growth pressures and Knudsen cell temperatures. Selective epitaxial growth was also achieved at 630°C even though Ge source was used. From these results of growth rate acceleration, hydrogen surfactant effect and selective epitaxial growth, it can be seen that the Si 2H 6Ge MBE has the merits of gas source MBE without GeH 4 that is a high poisonous and self-explosive gas.