Selective epitaxial growth of Ge and SiGe using Si 2H 6 gas and Ge solid source molecular beam epitaxy

Abstract

Selective epitaxial growth of SiGe on Si(100) substrates with a SiO 2 mask was successfully achieved by Si 2H 6 gas and Ge solid source molecular beam epitaxy (Si 2H 6-Ge MBE), and the properties and the mechanism are presented for the first time. The incubation times and the critical thicknesses of SiGe and Si were studied at growth temperatures of 575 to 630°C. The critical thickness of SiGe was the same as that of Si using Si 2H 6. The mechanism of the SiGe selective epitaxial growth by this method has been clarified. The Ge selective epitaxial growth was also performed at a temperature of 610°C. Two nucleation mechanisms of SiGe on SiO 2 layers were proposed.