Abstract
Microstructural changes and the evolution of silicide phases initiating at the interface between thin films of Si and Ti have been investigated by transmission electron microscopy and diffraction. This configuration allows an unambiguous interpretation of the results since the reactions are not mediated by SiO2. Spontaneous formation of the TiSi phase of nominal thickness occurs at room temperature, which is however not the actual growth phase at intermediate annealing temperature (500<T<600 °C). At these temperatures, mixed phases of Ti5Si3, Ti5Si4, and TiSi occur. Subsequent annealing at 600 °C leads to the orthorhombic TiSi phase with a heavily defective microstructure. On direct annealing at 600 °C, a well crystallized TiSi phase evolves in the early stages. Progressive growth of this phase does not occur and later a transformation to the C54 TiSi2 phase with a heavily defected microstructure occurs.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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