The growth of In‐rich InGaN/GaN single quantum wells by metalorganic chemical vapor deposition

Abstract

In-rich InGaN/GaN single quantum wells were grown by metalorganic chemical vapor deposition for the first time to the best of our knowledge. The structures consist of a 2-μm thick GaN buffer layer, a 2-nm thick In-rich InGaN single quantum well, and a 20 nm thick GaN capping layer. Single quantum well structures were examined by transmission electron microscopy. Photoluminescence emissions from the single quantum well samples were observed at wavelengths ranged from 400 nm to 500 nm depending upon the growth conditions of the InN layer. From a simple energy level calculation, we found the possibility of extremely large emission peak shift with well thickness.