Abstract
AbstractWe report on the self organized growth of GaN quantum dots deposited on Alx Ga1–x N layer by plasma‐assisted molecular beam epitaxy. It is found that the relaxation of Alx Ga1–x N layer on AlN depends on Al composition and thickness. The measurement of the variation of lattice parameter indicated that GaN quantum dots do not relax completely on Alx Ga1–x N layer. Optical properties of undoped and Eu‐doped quantum dots on AlGaN layer were studied. Visible light emission from Eu3+ ions has been observed and showed strong thermal stability. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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