The growth and rare‐earth doping of GaN quantum dots on AlxGa1–xN layer by plasma‐assisted molecular beam epitaxy

Abstract

AbstractWe report on the self organized growth of GaN quantum dots deposited on Alx Ga1–x N layer by plasma‐assisted molecular beam epitaxy. It is found that the relaxation of Alx Ga1–x N layer on AlN depends on Al composition and thickness. The measurement of the variation of lattice parameter indicated that GaN quantum dots do not relax completely on Alx Ga1–x N layer. Optical properties of undoped and Eu‐doped quantum dots on AlGaN layer were studied. Visible light emission from Eu3+ ions has been observed and showed strong thermal stability. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)