Abstract
We study the self organized growth of GaN quantum dots deposited by molecular beam epitaxy on AlxGa1–xN, with x varying between 1 and 0.21. As a result of the specific strain relaxation mechanism of AlxGa1–xN on AlN, it is found that dots can be formed for an Al content as low as about 30%. Monopolar devices have been realized by depositing Schottky contacts on n-type doped Al0.5Ga0.5N. Finally, electroluminescence of Eu-doped GaN quantum dots embedded in n-type Al0.5Ga0.5N has been demonstrated, emphasizing the potentialities of such an active layer for room temperature visible light emission. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
