Abstract
The m-plane InN (1 \(\bar 1\) 00) epilayers have been grown on a LiAlO2 (1 0 0) substrate by a two-step growth method using a metal-organic chemical vapor deposition (MOCVD) system. The low temperature InN buffer layer (LT-InN) is introduced to overcome the drawbacks of thermal instability of LiAlO2 (LAO) and to relieve the strains due to a large thermal mismatch between LAO and InN. Then the high temperature m-plane InN (1 \(\bar 1\) 00) epilayers (HT-InN) were grown. The results of X-ray diffraction (XRD) suggest that the m-plane InN (1 \(\bar 1\) 00) epilayer is a single crystal. The X-ray rocking curves (ω scans) (XRC) and atomic force microscopy (AFM) indicate that the m-plane InN (1 \(\bar 1\) 00) epilayer has anisotropic crystallographic properties. The PL studies of the materials reveal a remarkable energy band gap structure around 0.70 eV at 15 K.
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