Abstract
The Metalorganic Chemical Vapor Deposition (MOCVD) system has been widely used for the growth of epitaxial semiconductors layers, with high quality and excellent surface morphology, however this technique is not free of problems. The mean problem of the MOCVD systems, is the use of highly toxic gases, as in the case of arsine and phosphine both of them used as precursors of the elements of the five family, phosphor and arsenic. In this work we present our results obtained in the growth of AlXGa1-XAs/GaAs layers by an alternative MOCVD system in which the use of arsine has been substituted by the use of metallic arsenic.
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