High temperature growth of InN on GaP(1 1 1)B substrate using a new two-step growth method

Abstract

High temperature growth of InN is studied on GaP(1 1 1)B substrate using a new two-step growth method by metal organic vapor phase epitaxy. A single crystalline InN film with an excellent surface morphology can be grown on GaP(1 1 1)B at high temperature (600–650°C) using a low temperature InN buffer layer. The low temperature InN buffer layer is grown at 450°C, and then the temperature is raised to the epitaxial growth temperature (600–650°C) while continuing the growth. It is found to be a very effective growth technique to obtain high temperature growth of InN using a low temperature buffer layer. The low temperature InN buffer layer was also needed to suppress the substrate surface nitridation during the growth at such high temperature. The differences of this new two-step growth method from the conventional two-step growth method as well as their influences on the grown InN films are also discussed in details.