The gate and drain control coefficients effect on CNTFET performance under different temperature

Abstract

This paper deals with different temperature effects to analyses the behaviour of carbon nanotube field effect transistors (CNTFETs) under ballistic conditions and based on the changes of gate and drain control coefficient value. A deep study of both gate and drain control coefficient effect on the performance of CNTFETs has been conducted under different temperature and the output of the device has been analyzed through different parameters. Higher values of control coefficient help to attain larger transconductance with increased temperatures. On-state current to leakage current ratio shows a steady state response towards increment of gate control coefficient while a linear decay of current ratio is observed with the increased value of drain controlled one. DIBL effect decreases with the value of gate control one and increases with the drain control coefficient. In this way, the optimum value for both the control coefficient has to be considered in order to perform well.