High dielectric material dependence of carbon nanotube field effect transistor considering non‐ballistic conduction

Abstract

As a result of this reported research, a simulation model to analyse the behaviour of carbon nanotube field effect transistors (CNTFETs) under non-ballistic conditions is explained and the effect of gate dielectric on the performance of CNTFETs has been explored in detail. For the first time, a thorough study of the combined non-ballistic effect on the performance of CNTFETs has been conducted and the output of the device has been analysed. It has been observed that a gate material with a high dielectric constant leads to higher on-state current and higher on and off state current ratio. In addition, the transconductance, total capacitance, charging energy, subthreshold swing (S), drain-induced barrier lowering (DIBL) and gain with respect to the dielectric constant have been observed and analysed. Transconductance and total capacitance increases by a significant amount, while charging energy and S decrease as the dielectric value increases. The DIBL and gain vary slightly as a higher value dielectric material is used as a gate. Furthermore, the results of this study have been plotted against previously reported ballistic outputs to provide a better perception of the deviation from ideal behaviour. At the same time, the outcomes of this analysis have been compared against some reported experimental values.