A quantum mechanical study of Carbon Nanotube Field Effect Transistors (CNTFET) and parametric analysis of temperature variant control coefficients

Abstract

The quantum mechanical study in this paper deals with the impacts of control coefficients on different parameters of Ballistic and Non-Ballistic conduction in CNTFET. Device parameters like current ratio, Drain Induced Barrier Lowering (DIBL) and transconductance are compared with respect to both gate control (α G ) and drain control (α D ) coefficients under different temperatures for both the regimes. As these parameters influence the carrier transport inside the CNT channel, there is a variation in the current flow in the device. In order to compare the performance of CNTFET in both ballistic and non-ballistic conditions the optimum values for both the control coefficients are considered. The variation of dielectric constant was also taken in account which yielded almost 2 times increase in both Current ratio and Transconductance and almost no change in DIBL when the initial value of our observation is raised up to 3 times.