Abstract
The formation process of the ‘rect’ structure of the Si(111)-7×3-In surface (referred to as 7×3-rect) is studied in detail by varying the post-heating temperature after indium deposition on the Si(111) substrate. We find that at a low post-heating temperature of about 400 °C, two-dimensional indium islands of tens of nm in size are formed, consisting of triple layer with a 7×3-In reconstruction different from the 7×3-rect reconstruction (referred to as 7×3-TL). Although the atomic arrangements in the topmost indium layers of the 7×3-TL and the 7×3-rect reconstructions are considered to be nearly the same, their dIt/dVs(Vs) curves look different from each other. Surface defects in the disordered domain around the 7×3-TL islands originate from the partially remaining 7 × 7 reconstruction at the interface between the Si substrate and the indium layers. Additional indium atoms evaporated on the 7×3-rect surface with the 7×3-TL islands form flat wide single indium layers incorporating the 7×3-TL islands. However, the layers do not adopt the 7×3-TL reconstruction, but the incommensurate ∼5.4×∼5.4 reconstruction.
Published Version
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