Abstract
Abstract— The paper presents simulation results of the field control of phase metal-insulator transition in transistor structures based on vanadium dioxide. The calculations of the field and the electron density in the space charge region in the metallic (M) and semiconducting (S) phases are given. It is shown that the field control of the phase transition at room temperature in the forward direction (from S- to M-phase) inefficiency due to the strong screening of the space charge on the Debye length does not exceed two unit cell of VO2.
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