Abstract
Abstract— The paper presents simulation results of the field control of phase metal-insulator transition in transistor structures based on vanadium dioxide. The calculations of the field and the electron density in the space charge region in the metallic (M) and semiconducting (S) phases are given. It is shown that the field control of the phase transition at room temperature in the forward direction (from S- to M-phase) inefficiency due to the strong screening of the space charge on the Debye length does not exceed two unit cell of VO2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal on Selected Topics in Nano Electronics and Computing
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.