The Failure Modeling Analysis of Bipolar Silicon Transister Device Caused by ESD

Abstract

With the development of electronic technology, the electronic threats faced by microwave semiconductor devices was increasingly serious.In order to study the electrostatic discharge damage mechanism of bipolar silicon transistors, this paper analyzed the basic physical characteristics of bipolar transistor in electrostatic discharge, such as kirk effect and current crowding effect. Through analysis the human body electrostatic discharge model, established the ESD electric injury model of bipolar silicon transistor. If we knew the production process parameter of devices, we can calculate the ESD damage threshold for designing bipolar silicon device and providing a theoretical basis of parameter optimization. Finally the common ESD damage criterion were analyzed from different angles.