Sensitive Ports under the Action of Different ESD Models of High-Frequency Low-Noise Silicon Bipolar Transistors

Abstract

In order to find the most sensitive port of some high-frequency low-noise silicon bipolar transistors, some electrostatic discharge (ESD) experiments were taken on three typical devices, which is beneficial to study the relevant law of ESDS (ESD sensitivity). Based on the experimental results, reverse-biased emitter-base junction was compared with reverse-biased collector-base junction about failure voltage under the action of HBM ESD, MM ESD and BMM ESD. The results show that the sensitive port is different for those mentioned silicon bipolar transistors under the action of different ESD models. Consequently, the most sensitive port of high-frequency low-noise silicon bipolar transistors may be variable for different ESD models.