Abstract
ABSTRACT Over the last three years we have demonstrated key milestones in the fabrication of buried nano-scale devices in silicon using an ultra-high vacuum scanning tunnelling microscope (STM) and silicon molecular beam epitaxy (MBE). Recently we have achieved the final step of connecting the STM-patterned buried phosphorus devices to the outside world to perform electrical measurements. The results of our low temperature magnetotransport measurements highlight the potential of this approach for the creation of atomic-scale devices. Keywords: Scanning Probe Microscopy (SPM), Quantum wire, Nanoelectronics, Nanotechnology, Weak localization 1. INTRODUCTION The concept of using a monolayer of hydrogen as a resist on a Si(001) surface for scanning tunnelling microscope (STM) lithography was first demonstrated by Lyding et al. 1 in 1994. Since then hydrogen lithography has been used to pattern the Si(001) surface for the subsequent selective adsorption of various atoms and molecules on the silicon surface and has enabled the formation of nanometer wide lines of Al
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