Abstract
To detect changes in the environment of the lattice constituents in ion beam amorphized Si material at various stages of annealing glancing angle X-ray absorption fine structure (XAFS) measurements at the Si K-edge were performed. The recrystallisation of the Si matrix was seen by the emerging of the second and third shell of the diamond structure. The transition took place in a temperature interval of about 100°C centered at 625°C, consistent with former Rutherford-back-scattering/channeling results.
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