Optical Luminescence Yield X-ray Absorption Fine Structures at the Sulphur and Silicon K-edge

Abstract

Optical luminescence induced by soft x-ray excitation in the vicinity of the S K-edge (∼2472 eV) and Si K-edge (∼1839 eV) in P-31 (ZnS:Cu phosphor) and porous silicon has been studied with an optical spectrometer. The luminescence yield was in turn used, together with total electron yield, to record x-ray absorption fine structures in the near edge region of the corresponding S and Si K-edge. It is found that although the luminescence spectrum of soft x-ray excited P-31 above and below the S K-edge is identical, a small shift is noted in porous silicon at photon energies below and above the Si K-edge and that the luminescence yield (optical photon/soft x-ray photon absorbed) varies significantly depending on experimental conditions and/or the nature of the exciting channel.