Abstract
Combining experimental measurements with an analysis of sample strain, we have determined the “unstrained” energy band gap, Eg, of AlxGa1-xN for 0 ≤x ≤1. Care was taken to grow films with narrow (00.2) and (10.2) X-ray diffraction rocking curve widths, to insure low residual strain in the samples. This is significant because, even for our high quality AlxGa1-xN thin films, residual strain shifts the fitted band gap bowing parameter significantly. For AlxGa1-xN random alloys on GaN films deposited on sapphire, the strain-corrected band gap dependence on alloy composition is fit well by a bowing parameter of b = 0.70 ±0.05. In contrast, AlxGa1-xN films deposited directly on sapphire had much higher X-ray line-widths and their Eg's are not fit well by one value of the bowing parameter. This suggests that material quality may be a significant reason for the large range of bowing parameters reported in the literature.
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