Abstract
The Einstein relation for the diffusivity-mobility ratio of the carriers in zero-gap semiconductors, taking n-HgTe as an example is studied. It is found, that this ratio increases with increasing electron concentration and is in close agreement with the suggested experimental method of determining the Einstein relation in degenerate semiconductors with arbitrary dispersion laws. In addition, the corresponding well-known results for isotropic parabolic energy bands have also been obtained from our generalized expressions under certain limiting conditions.
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