Abstract
An attempt is made to study the Einstein relation for the diffusivity-mobility ration of the electrons of narrow-gap semiconductors under strong magnetic quantization in accordance with the three-band Kane model by incorporating spin and broadening. It is found, taking n-Hg 1- x Cd x Te as an example, that the same ratio oscillates with inverse magnetic field and increases with increasing electron concentration which is in agreement with the suggested experimental method of determining the Einstein relation in degenerate semiconductors having arbitrary dispersion law.
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