Abstract
Results are presented on the effects of doping variation on the cutoff wavelength ( λ c) of homojunction interfacial workfunction internal photoemission far infrared detectors. The behavior at low doping (<10 19 cm −3) is well predicted by the free carrier absorption model used previously. However at high doping the observed λ c is much shorter than the values predicted by the workfunction obtained from Arrhenius plots. An explanation for the reduced λ c in the high doping region is presented using a model for depletion of the heavy hole band due to direct transitions from the heavy hole to light hole band.
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