Abstract
The electrical properties in the InAlN/AlN/GaN high electron mobility transistor grown by metal-organic vapor deposition (MOCVD) with different growth parameters were investigated in this study. We observed that two-dimensional electron gas (2DEG) channel was influenced by thickness of AlN spacer layer and a stable stage prior to the growth of AlN spacer layer. The TEM images showed the generation of dislocations at interface between AlN/GaN and InAlN/AlN with the thicker AlN spacer layer. These dislocations acted as electron scattering center and degraded the electron mobility in the 2DEG channel. Besides, a too long stable stage also appeared degradation in the electron mobility due to the etching effect of H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gas. By optimizing growth parameters, the highest electron mobility of 890 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V.s.
Published Version
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