Abstract
AbstractIn a previous paper [1] the plasma minimum in anisotropic semiconductors was theoretically analysed. In the present paper, degenerate n‐type InSb is considered and the anisotropy is induced by applying uniaxial stress. Using the theory developed by Bir and Pikus [2] the effective mass tensor is derived for stress applied in the [110], [100], and [111] directions. Measurements of the plasma minimum for samples stressed along the [100], [110], and [111] directions are presented and the effective masses are calculated. The results are used to obtain the value of the deformation potential (−40.8 eV) and of the band parameters a, b, and d (−88, −0.17, and −4.6 eV).
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