Abstract
The low dielectric SiOC(–H) films can be damaged by oxygen plasma during photoresist stripping. In this work, we have studied the CH4 plasma treatment to improve the characteristics of the SiOC(–H) film. Posttreated SiOC(–H) film in CH4 plasma showed the decreased leakage current density of 1 A/cm2, which was lower two to three orders of magnitude than that of nontreated SiOC(–H) film. Unlike the nontreated SiOC(–H) films, Fourier transform infrared (FT-IR) absorbance spectrum of posttreated SiOC(–H) film remained almost unchanged after O2 ashing. The dielectric constant of the treated SiOC(–H) film also did not change much. The CH4 plasma treatment can provide additional hydrogen and carbon to passivate the inner structure of SiOC(–H) films. Therefore, the properties of SiOC(–H) films are significantly enhanced by CH4 plasma treatment.
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