Abstract
This study compares the effectiveness of two Bi sources, trimethyl bismuth (TMBi) and triethyl bismuth (TEBi), in the growth of GaAs1‐yBiy thin films. Through optimization of the growth conditions, GaAs1‐yBiy‐GaAs heterostructures with high lateral homogeneity of Bi are grown. TEBi results in a lower carbon concentration than is typical of methyl‐based compounds when used at low growth temperatures. These findings suggest the process of Bi incorporation proceeds more efficiently using the TEBi precursor. These studies do not show noticeable growth rate reduction under the dilute flows of TMBi and TEBi, however at high Bi source flux, a growth rate drop was observed for both sources.
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