Abstract
The effect of Si planar doping on the DX center in AlGaAs is investigated using deep level transient spectroscopy and Hall measurements. We observe an increase of approximately six orders of magnitude in the DX center capture cross section in Al 0.26Ga 0.74As with a Si sheet concentration of 2 × 10 12 cm -2 as compared to homogeneously doped Al 0.26Ga 0.74As. A model is suggested to explain the increase in capture cross sections based on a Si-induced biaxial stress state in the lattice. Hall measurements show that the ratio of deep donors to shallow donors is significantly decreased between the homogeneous sample and the planar doped sample suggesting planar doping may be superior for devices operating at variable temperatures.
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