Abstract
A method for fabrication of highly (100)-oriented Pb(Zr x Ti1−x )O 3 thin films by RF magnetron sputtering with a special buffer of PbO x (RFMS-SBP) was developed. With this method, highly (100)-orientated Pb(Zr 0.2 Ti 0.8 )O 3 films were prepared on PbO x /Pt(111)/Ti/SiO 2 /Si(100) substrates, and the preferential (100) orientation of the film is 92%. The effect of the thickness of PbO x buffer layer on Pb(Zr 0.2 Ti 0.8 )O 3 films was investigated. The PZT thin films with proper thickness of PbO x buffer layer possesses excellent ferroelectric properties with higher remnant polarization (P r = 69.7 μC/cm 2 ), lower coercive field (E c = 97.5 kV/cm), and the larger pyroelectric coefficient (p = 2.6 × 10 −8 C/cm 2 .K) at room temperature.
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