Abstract
This work explores the electrical properties of Al2O3 films formed by atomic layer deposition (ALD) using different oxygen sources (water and ozone) and trimethylaluminium (TMA). The as-deposited Al2O3 layers were used as blocking oxides in metal (Pt)–alumina–nitride–oxide–silicon memory capacitors. The capacitance–voltage characteristics of the devices with Al2O3 deposited with the ozone–TMA and water–TMA processes showed almost identical capacitance equivalent thicknesses in accordance with transmission electron microscopy imaging which revealed similar dielectric layer thicknesses between the two gate stacks. At high negative gate voltages the water-TMA devices exhibited higher leakage currents than the ozone-TMA devices. This effect had a direct impact on the attainable memory window, due to the limited erase performance of the capacitors and the extended erase-saturation effect. These findings indicate that the ALD chemistry and in particular the oxygen source is a crucial factor which determines the electrical behavior of the as-deposited Al2O3 films, and therefore the performance of the memory stacks. These differences are attributed to the different trap distributions either in space or energy within the Al2O3 layers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.