Abstract
The influence of electron irradiation with energies of 0.5–2.5 MeV with fluences up to 70 × 1018 cm–2 on the electrical resistivity in the basal plane of YBa2Cu3O7–δ single crystals in the temperature range from the superconducting transition, Tc, to 300 K has been studied. Such irradiation leads to the appearance of a significant number of defects that cause a decrease in anisotropy, an appreciable increase in phonon scattering, reduction of Tc, and broadening of the superconducting transition. Under the conditions specified, the temperature dependence of electrical resistivity is approximated with high accuracy by the charge carriers’ scattering on defects and phonons, and fluctuating conductivity in the Lawrence-Doniach (LD) model. The dependences of approximation parameters on fluence are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
