Abstract
The effect of electron irradiation with energy Å=10 ÌåV and different fluence (Ô=1×1016 — 1×1018 el/ñm2) on main properties of boron doped silicon, p-type Si1-xGex (õ=0.03) solid solutions whiskers and laser recrystallized polysilicon on insulator layers with different carrier concentration has been studied in the wide temperature range of 4.2 — 300 K. It was shown that electron irradiation caused the decrease of Si, Si1-xGex whiskers and poly-Si layers conductivity, especially at cryogenic temperatures. Correlation between the influence of electron irradiation on resistance and magnetoresistance of crystals and layers has been observed. The uniaxial strain effect on the conductivity of irradiated Si whiskers, degenerated and with boron concentration in the vicinity of metal-insulator transition (MIT) was studied, the gauge factor for these crystals has been calculated in 4.2 — 300 K temperature range. These studies gave the possibility to predict the stability of sensors on the basis of investigated Si, Si1-xGex whiskers and heavily doped poly- Si layers to high energy electron irradiation (Å≤10 MeV) with fluence Ô≤1×1017 ål/ñm2.
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