The Effect of Interface States Density Distribution and Series Resistance on Electrical Behaviour of Schottky Diode

Abstract

The forward and reverse bias current-voltage characteristics of the In/p-Si Schottky barrier diode (SBD) have been investigated in the temperature range of 360K to 120K. The current-voltage measurements have been used to extract the electrical parameters such as series resistance, barrier height, ideality factor and interface states density distribution. The higher values of series resistance, ideality factor and interface states energy distribution at low temperature was attributed to the presence of an interfacial insulated layer, popularly known as metal-insulator-semiconductor (MIS) devices. The temperature dependence energy distribution profile of interface states was obtained from the forward bias I-V-T measurements by taking into account the bias dependence of the effective barrier height and ideality factor. The interface states density (NSS) decreased with increasing temperature was explained by the result of atomic restructuring and reordering at the metal semiconductor interface.