Abstract
The sample temperature during ion implantation in InP has a pronounced effect on the electrical characteristics of the resulting layers. For the heavy ions, Se (donor) and Cd (acceptor) implant temperatures ≥ 150°C are necessary to minimize n-type residual damage and to achieve maximum activation of the implanted ions. Results for the intermediate mass n-type impurity Si are similar to those for the heavy ions, whereas for the intermediate mass acceptor Mg the implant temperature effects appear to be strongly dose dependent. With the light acceptor ion Be, room temperature implants are as good as or better than those done at elevated temperatures. Results for the light ion C yield n-type layers with very low electrical activation. Higher activation is generally achieved with n-type than with p-type impurities and electron concentrations in excess of 10 19 cm −3 are readily attainable.
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