Abstract
The effect of hydrogen species on the microstructures and the electronic properties of nanometer sized crystalline silicon (nc-Si:H) prepared in a triode plasma-enhanced chemical vapor deposition (PECVD) system with a hydrogen-diluted silane plasma were investigated. It has been found that for a given set of deposition parameters there is a threshold value of dilution ratio ( H 2 H 2 + SiH 4 ) for the formation of nc-Si:H, which suggests that a minimum concentration of hydrogen atoms should be provided at the growing surface during the deposition processes. The electronic properties of nc-Si:H were changed when the H 2 dilution ratio was greater than 94%. The dark-conductivity, σ d, increased from 10 −10 to 10 −3 S/cm, although the photo-conductivity, σ ph, changed by only one order of magnitude. In addition, the drift mobility, μ d, increased from 0.8 to 16 cm 2/V · s. The dependence of the electronic properties on the hydrogen content and structural configurations in nc-Si:H is briefly discussed.
Published Version
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