Abstract
We present the development of a Plasma-Enhanced Chemical Vapor Deposition (PECVD) system for deposition of multi-walled, vertically aligned Carbon Nano-Tubes (CNT) as cathode field emitter sites in a large (1000 × 1000), 1 cm2 area array. The CNT deposition is compatible with the use of Si wafers containing the individual emitter site ballasts in the form of Si n-type JFETs and series source resistors. In earlier attempts to deposit CNTs in the PECVD system using only DC power for combined plasma, heat, and bias E-field generation severe arcing was observed which frustrated the yield1. By adding modest amounts of RF power to the system the bias generation and heating is decoupled from the plasma generation, CNT growth temperatures can be lowered and the arcing on the insulator surfaces of the Si wafer is significantly reduced. Initial results from the deposition system will be presented together with the measured CNT field-emission I–V characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
