Abstract
The influence of hydrogen passivation using forming gas annealing (FGA), on the electrical performance of double-polysilicon self-aligned bipolar junction transistors was investigated. While the collector current remained essentially unaffected after FGA, the base current decreased substantially. As a result, the peak DC current gain increased by a factor of three. Identification of the various base current components showed that the SiO 2/monosilicon interface area along the perimeter of the emitter window, were effectively passivated after FGA, both in the quasi-neutral base and in the space charge region. The FGA treatment was also found to lead to an increase in the peak cut-off frequency by up to 40%. This is explained by a decrease in emitter–base junction capacitance, which was verified experimentally.
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