Abstract
The effect of hydrogen passivation by forming gas annealing (FGA) on the bipolar junction transistor low frequency noise was investigated. The results demonstrated a reduced 1/ f noise component by a factor of five after FGA, which resulted in a reduced corner frequency. An equivalent input noise spectral density ( S I B ) dependence on base current ( I B) of S I B ∼ I 2 B and on emitter area ( A E) of S I B ∼ A E −1 was observed, both before and after FGA. The interpretations of the results were (a) the 1/ f noise was due to carrier number fluctuation, (b) the noise sources were homogeneously distributed over the polysilicon/monosilicon emitter interfacial oxide, and (c) the noise sources were passivated by hydrogen.
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