Abstract
Amorphous SiGe:H alloy is the key material for highly efficient and stable a-Si-based tandem solar cells. We have studied the effect of H 2 dilution (0% < H 2 < 95%) of the source gas mixture (SiH 4 + GeH 4) on the glow discharge a-Si 1− x Ge x :H alloys with x varying from 0 to 0.55. The dependence of composition, deposition rate, IR absorption spectra and optical properties on hydrogen dilution are reported and analyzed. The CPM method was used to obtain sub-band-gap absorption spectra. The a-SiGe:H alloys show high photosensitivity, a low Urbach energy (<60 meV) and a low density of states in the gap (<3×10 16 cm 3) for as low as 1.3 eV band gap material. Hydrogen dilution was found to improve the photoelectrical properties; it minimizes the silicon dihybride bonding and lowers the incorporation of Ge into the film.
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