Abstract
AbstractA Transmission Electron Microscopy (TEM), Photoluminescence (PL) and Photoluminescence Excitation Spectroscopy (PLE) investigation has been conducted on Ga0 52In0.48P epilayers, grown on GaAs(001) by Gas-Source Molecular Beam Epitaxy. Selected area diffraction in the TEM shows that epilayers grown at temperatures between 480°C and 535°C exhibit CuPt-type ordering with the antiphase domain size increasing with increasing growth temperature. PLE data shows that, in the temperature range 480°C to 535°C the band gap energy of Ga0.52In0-48P epilayers increases with increasing growth temperature from 1.971 to 2.003 (±0.001 eV). For high band gap optical data storage applications these values compare well with the highest band gap energies reported for epilayers grown by MOCVD.
Published Version
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