Abstract
Effects of hydrogen irradiation on optical quality of GaN x As 1− x alloys grown by gas source molecular beam epitaxy are studied by photoluminescence (PL) and PL excitation spectroscopies. A strong blue shift of the alloy band gap towards the value of a reference N-free GaAs samples is revealed. Substantial improvements in the optical quality of the structures induced by hydrogen, due to a reduction of band edge potential fluctuations, is also demonstrated. The effect is tentatively attributed to the preferential trapping of hydrogen atoms at the lattice sites with the highest N compositions, which leads to the neutralization of electronic states contributing to the band tail states as well as to the improvement in strain uniformity.
Published Version
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