Abstract
In this paper we report on a systematic investigation of the influence of the growth temperature on the current voltage (I-V) characteristics of symmetric AlAs/GaAs double-barrier tunnelling diodes grown by molecular beam epitaxy (MBE) and a correlation between electrical and structural properties. It is shown by high-resolution transmission electron microscopy (HRTEM) that the growth temperature affects the interface roughness and the symmetry of the double-barrier region. Both the microstructure of the interfaces and the Si doping spreading in the double-barrier region have a significant influence on the peak-to-valley ratio (PVR) and the symmetry of the I-V characteristic. The substrate temperature was varied from 480 to 680 degrees C. It is demonstrated that the highest PVRS at room temperature are found for samples grown in the temperature range 580-600 degrees C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
