Abstract
The effect of the indium concentration on the quality of the AlAs/InGaAs interfaces in resonant tunneling diodes is studied. It is shown by high-resolution transmission electron microscopy that the interface quality of the normal interface (AlAs on InGaAs) nearly achieves even at low growth temperatures TG=500 °C the quality of the corresponding AlAs/GaAs interface at the optimum substrate temperature. The improvement in the interface quality and the higher potential barrier in the InGaAs system leads to higher peak-to-valley ratios (PVRs) of the diode relative to that in the GaAs system. In addition, current–voltage characteristics of resonant tunneling diodes are calculated as an integral over the transmission coefficient and the supply function. Scattering effects are included by folding the transmission probability with a Lorentzian. The theoretical simulations give further insight into the physics of the diodes.
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