Abstract
The effect of fluorine on MOS device channel length has been evaluated. Fluorine has been introduced into the transistor by self-aligned ion implantation after the lightly doped drain (LDD) implant. The impact of fluorine in the LDD region, and its effect on the electrically determined channel length (L/sub eff/), has been examined. Measurements taken from 0.6- mu m LDD MOSFETs show a significant dependence of the L/sub eff/ on fluorine implant dose. The n/sup +/ resistor also shows more width reduction compared to unfluorinated samples. The decrease in channel length reduction by adding fluorine in the LDD region may yield way to relieve short-channel effects for the continuous scaling of CMOS devices into the deep-submicrometer region. >
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