Abstract
InGaAs layers grown by low-temperature molecular-beam epitaxy on InP substrates at variable flow ratios between elements of groups III and V are investigated. Layers with a defect structure and low electrophysical parameters are shown to grow with an excess of the components of group III. Growth with high As flows gives rise to trapping of excess arsenic and generation of point defects (AsIII antistructural defects and VIII vacancies). High-quality InGaAs layers at low growth temperatures are produced under near-stoichiometric conditions (V/III = 1–4).
Published Version
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