Abstract
In this paper we summarize basic material properties of low temperature (LT) molecular beam epitaxy (MBE) grown Al(Ga)InAs. A lower MBE growth temperature limit for these alloys is given by the incorporation of excess arsenic occurring near a growth temperature of 100°. The specific resistivity increases with the Al content, and its growth temperature dependence is correlated with the incorporation of deep traps. In situ annealing of LT-Al(Ga)InAs layers was found to have virtually no effect on the electrical properties. In GalnAs/AlInAs high electron mobility transistor structures LT-MBE was applied to the buffer, spacer, and gate layers to improve device characteristics.
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